Applied Physics Letters · 1999 · 14 citations · 7 references
Natural SciencesPhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyNonlinear Optical MaterialsNonlinear OpticsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsExcitationFour-wave MixingGallium Nitride (Gan) MaterialsLow-temperature MaterialsNonlinear ExcitationNonlinear Optical SusceptibilityNonlinear SusceptibilityThird-order Nonlinear Susceptibility
In order to determine the third order of the nonlinear susceptibility χ(3) of GaN, we perform degenerate four-wave mixing measurements in a two-beam configuration at low temperature on a GaN epilayer on sapphire substrate. We measure the excitation spectrum of χ(3) close to the exciton resonances. Besides the χ(3) contribution, higher orders of the nonlinear susceptibility show already up around 10 kW cm−2, leading to a saturation of the signal. Results are complemented by a study of the influence of a band-to-band excitation (ℏωP=4.02 eV) on the nonlinear susceptibility.
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Optical properties of GaN epilayers on sapphire
Magloire Tchounkeu, O. Briot, Bernard Gil et al. · Journal of Applied Physics · 1996 · 135 citations
Natural Sciences, Materials Engineering, Materials Science +17
Pauline Rigby · Nature · 1996 · 21 citations · Full text
Business, Economics, Forecasting +1
Large optical nonlinearities near the band gap of GaN thin films
T. J. Schmidt, J. J. Song, Y. C. Chang et al. · Applied Physics Letters · 1998 · 20 citations
Natural Sciences, Materials Engineering, Materials Science +17