Publication | Open Access
First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates
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2009
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EngineeringSilicon On InsulatorSemiconductor DeviceAdvanced Packaging (Semiconductors)NanoelectronicsThermal ResistanceCmos TechnologyHeat Dissipation ImprovementElectronic PackagingElectrical EngineeringGate LengthBias Temperature InstabilitySemiconductor Device FabricationHeat TransferMicroelectronicsStandard SoiApplied PhysicsFirst DemonstrationThermal EngineeringBeyond Cmos
We have fabricated Silicon-On-Diamond (SOD) substrates on which, for the first time, we integrated n and p Fully Depleted MOSFETs high-K/metal gate down to 200nm gate length. The devices show excellent electrical characteristics and a 57% improvement of the thermal resistance compared to the co-processed one on standard SOI.