Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs

Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates

Chao‐Shun Yang, Laura L. Smith, Christian Arthur et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 158 citations

Engineering, Electrical Engineering, Materials Science +17

First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride

W. L. Warren, Patrick M. Lenahan, Sean E. Curry · Physical Review Letters · 1990 · 145 citations

Natural Sciences, Chemistry, Physics +15

Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride

W. L. Warren, F. C. Rong, Edward H. Poindexter et al. · Journal of Applied Physics · 1991 · 78 citations

Natural Sciences, Materials Science, Physics +17

a-Si:H TFTs Made on Polyimide Foil by PE-CVD at 150°C

H. Glesková, S. Wagner, Zhigang Suo · MRS Proceedings · 1998 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +9

150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide Substrates

H. Glesková, S. Wagner, V. Gašparı́k et al. · Journal of The Electrochemical Society · 2001 · 69 citations

Engineering, Electrical Engineering, Materials Science +17