150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide Substrates

Abstract

We have developed a 150°C technology for amorphous silicon thin-film transistors ͑a-Si:H TFTs͒ on polyimide substrates deposited by plasma enhanced chemical vapor deposition.The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively.In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility.TFTs with back-channel etch and channelpassivated structures were fabricated on glass or 51 m thick polyimide foil.The a-Si:H TFTs have an on/off current ratio of ϳ10 7 and an electron mobility of ϳ0.7 cm 2 /V s.