Non-volatile high-speed resistance switching nanogap junction memory

Abstract

Different voltage pulses were applied to Au nanogap junction to study the resistance switching characteristics. Consistent switching from a low to high resistance state was accomplished even at 20 ns pulse. Instead of setting current compliance for the reverse switching, we introduced a series resistance to the nanogap junction to limit the tunneling current and effectively performed the switching. The parasitic capacitance is shown to affect the programming speed. Upon reducing the capacitance, ns regime switching speed is achieved which indicates the potentiality of nanogap junction for high-speed random access memory.