Memory effects in complex materials and nanoscale systems

Yuriy V. Pershin, Massimiliano Di Ventra

Advances In Physics · 2011 · 810 citations · 246 references

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TL;DR

Memory effects, ubiquitous in nature, are especially significant at the nanoscale where electron and ion dynamics depend on system history, and are formalized through memristors, memcapacitors, and meminductors. This review surveys the memory properties of diverse materials and systems, evaluates theoretical and experimental progress, explores applications from electronics to biologically inspired circuits, and identifies future research opportunities. The authors critically assess the theoretical frameworks and experimental techniques that elucidate the time‑dependent resistive, capacitive, and inductive behavior of memory circuit elements.

Abstract

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here the memory properties of various materials and systems which appear most strikingly in their non-trivial time-dependent resistive, capacitative and inductive characteristics. We describe these characteristics within the framework of memristors, memcapacitors and meminductors, namely memory circuit elements whose properties depend on the history and state of the system. We examine basic issues related to such systems and critically report on both theoretical and experimental progress in understanding their functionalities. We also discuss possible applications of memory effects in various areas of science and technology ranging from digital to analog electronics, biologically-inspired circuits, and learning. We finally discuss future research opportunities in the field.

References

246