A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

Abstract

Crossbar array architecture is usually used for the high-density integration of the RRAM device. However, the large sneak current in the passive crossbar array limits the increase in the integration density. In this brief, the bipolar TiN/TaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Pt RRAM device is proposed as the dynamic selector for the unipolar Pt/TaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Pt RRAM device to suppress the sneak current in the crossbar array. The testing results show that the bipolar RRAM can act as a good selector, and the sneak current is reduced by about two orders estimated by the 1/2 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">read</sub> voltage scheme. With the suppressed sneak current, the maximum size of the crossbar array with the bipolar RRAM selector can be increased to more than 1 Mb according to the simulation results, indicating that the bipolar RRAM selector has great potential for the high-density memory applications.