Diffusion of silver in gallium arsenide at 1000 degrees C

Abstract

Radioactive silver was diffused into GaAs at 1000 degrees C. The diffusions were carried out over a range of diffusion times and with different amounts of extra arsenic in the ampoule. Profiles were plotted. It is proposed that the silver diffuses primarily by the movement of interstitial atoms but that most of the silver in the GaAs occupies a substitutional site. Electrical measurements were also carried out on diffused specimens, using capacitance-voltage and Hall techniques. All samples were p-type and a reasonably good correspondence was found between the silver and hole concentrations. It was established that the p-type conductivity was not due to thermal conversion and it was concluded that the silver acts as an acceptor in GaAs, occupying the gallium site.