Applied Physics Letters · 2007 · 99 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsDefects In Electronic MaterialsDislocations In SemiconductorsEpitaxial GrowthMicrostructure EvolutionSemiconductor Crystal GrowthSemiconductor DefectsDislocation PhysicsDislocationsDislocations In Epitaxial FilmsElimination MechanismsEpitaxial MaterialsThreading DislocationsTransmission Electron Microscopy Of DislocationsTrapping Effects
Recent research has demonstrated the effectiveness of the “aspect ratio trapping” technique for eliminating threading dislocations in Ge grown selectively in submicron trenches on Si substrates. In this letter, analysis of the mechanisms by which dislocation elimination is achieved has been carried out. Detailed transmission electron microscopy studies reveal that facets, when formed early in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. These dislocations are shown to behave as “growth dislocations,” which are replicated during growth approximately along the facet normal and so are deflected out from the center of the selective epitaxial regions.
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High quality Ge on Si by epitaxial necking
T. A. Langdo, C. W. Leitz, M. T. Currie et al. · Applied Physics Letters · 2000 · 206 citations