Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

M. Kittler, C. Ulhaq-Bouillet, V. Higgs · Journal of Applied Physics · 1995 · 89 citations

Engineering, Materials Engineering, Materials Science +17

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

Jinggang Lu, M. Wagener, G. A. Rozgonyi et al. · Journal of Applied Physics · 2003 · 60 citations

Engineering, Materials Engineering, Materials Science +17

Recombination at clean and decorated misfit dislocations

Z. J. Radzimski, T. Q. Zhou, A. Buczkowski et al. · Applied Physics Letters · 1992 · 47 citations

Engineering, Materials Engineering, Materials Science +17

Effects of iron contamination on the electrical activity of a silicon bicrystal

A. Ihlal, R. Rizk · Journal of Physics D Applied Physics · 1996 · 13 citations

Engineering, Materials Engineering, Materials Science +14