V. Higgs - Concepedia

Author

V. Higgs

King's College London

Also Known As

V Higgs, V. Higgs, Victor HIGGS, Victor Higgs

Publications

732

Citations

H-Index

Concepts

All Affiliations

King's College London Leibniz Institute for High Performance Microelectronics Bio-Rad (United Kingdom)University of Liverpool

About

V. Higgs is an author at King's College London specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	19	615
2	Applied Physics	16	20	626
3	Electrical Engineering	5	5	138
4	Natural Sciences	2	2	67
5	Chemistry	2	2	67

V. Higgs

Publications

626

Citations

H-Index

Page 1

	Year	Citations
Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level M. Kittler, C. Ulhaq-Bouillet, V. Higgs Journal of Applied Physics EngineeringTemperature DependenceCopper ContaminationSilicon On InsulatorDefect Tolerance	1995	89
Characterization of epitaxial and oxidation-induced stacking faults in silicon: The influence of transition-metal contamination V. Higgs, M. Goulding, A. Brinklow, Applied Physics Letters Transition-metal ContaminationEngineeringOxidation-induced Stacking FaultsOptoelectronic DevicesSilicon On Insulator	1992	58
Characterisation of Dislocations in the Presence of Transition Metal Contamination V. Higgs, E C Lightowlers, C. E. Norman, Materials science forum Materials ScienceEngineeringDislocation InteractionSevere Plastic DeformationCorrosion	1992	46
Cathodoluminescence imaging and spectroscopy of dislocations in Si and Si1−<i>x</i>Ge<i>x</i> alloys V. Higgs, E C Lightowlers, Shahram Tajbakhsh, Applied Physics Letters Materials ScienceMaterials EngineeringSemiconductorsEpitaxial GrowthEngineering	1992	44
Recombination Activity of Misfit Dislocations in Silicon M. Kittler, W. Seifert, V. Higgs physica status solidi (a) Materials SciencePhotoluminescenceEngineeringDislocation InteractionPhysics	1993	42
Characterization of compositionally graded Si1−<i>x</i>Ge<i>x</i> alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging V. Higgs, E C Lightowlers, Eugene A. Fitzgerald, Journal of Applied Physics Materials ScienceDislocation DensitiesPhotoluminescenceEngineeringDislocation Interaction	1993	36
Photoluminescence from MBE Si grown at low temperatures; donor bound excitons and decorated dislocations V. Higgs, E C Lightowlers, G. Davies, Semiconductor Science and Technology Materials ScienceDislocation D-band LuminescencePhotoluminescenceLow TemperaturesEngineering	1989	33
Metal-induced dislocation nucleation for metastable SiGe/Si V. Higgs, P. Kightley, P.J. Goodhew, Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringDislocation InteractionCrystalline Defects	1991	33
Luminescence associated with the presence of dislocations in silicon E C Lightowlers, V. Higgs physica status solidi (a) Materials EngineeringMaterials SciencePhotoluminescencePoint DefectsEngineering	1993	32
Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current technique V. Higgs, M. Kittler Applied Physics Letters EngineeringChemistrySilicon On InsulatorSemiconductor DeviceMisfit Dislocations	1993	31

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