Applied Physics Letters · 1986 · 29 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationDevice ModelingDevice SimulationField-effect TransistorsSemiconductor PhysicsCarrier Mobility MeasurementsCarrier Mobility ModelingCarrier Transport MechanismsElectron MobilityField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMetal-semiconductor Field-effect TransistorsPeak Velocity
We present the results of a Monte Carlo calculation of the electron velocity and mobility, as well as mobility measurements in compensated GaAs. For appreciable compensation ratios, the peak velocity, negative differential mobility, and peak-to-valley velocity ratios are drastically reduced in comparison with those in uncompensated GaAs. This reduction makes the Gunn effect less likely to manifest itself in ion-implanted GaAs metal-semiconductor field-effect transistors and other GaAs devices where compensation is important.
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