Journal of Applied Physics · 1985 · 42 citations · 11 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportHigh-frequency Semiconductor DevicesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsCarrier Transport MechanismsElectron DriftElectron Transport In SemiconductorsElectron-phonon ScatteringImpurity ScatteringPhonon ScatteringScatteringTransport In Semiconductors
The electron drift velocities in GaAs and In0.53Ga0.47As have been measured at room temperature and at liquid-nitrogen temperature for electric fields up to the onset of the Gunn effect. The experiments were performed on samples with carrier concentrations from 4×1014 to 1×1018 cm−3. The results illustrate effects of ionized impurity scattering, polar optical phonon scattering, alloy scattering, and intervalley scattering on electron transport in this range of electric fields, and confirm the potential of In0.53Ga0.47As for high-speed device applications.
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