Concepedia

Measurement of the Γ-<i>L</i> separation in Ga0.47In0.53As by ultraviolet photoemission

K. Y. Cheng, A. Y. Cho, S. B. Christman, T. P. Pearsall, J. E. Rowe

Applied Physics Letters · 1982 · 84 citations · 5 references

DOI

Concepts

Abstract

We have studied the valence band of Ga0.47In0.53As by ultraviolet photoemission using photon energies of 11.7, 16.8, and 21.2 eV. The photo-electron energy spectra show that the valence band of Ga0.47In0.53As has well-defined structure similar to that of binary III-V semiconductors. We have used these spectra to determine a conduction band Γ-L separation of 0.55 eV at 300 K.

References

5

Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's

A. Cappy, B. Carnez, R. Fauquembergues et al. · IEEE Transactions on Electron Devices · 1980 · 101 citations

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Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP

Pinchus M. Laufer, Fred H. Pollak, R. E. Nahory et al. · Solid State Communications · 1980 · 61 citations

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A Ga<sub>0.47</sub>In<sub>0.53</sub>As/InP heterophotodiode with reduced dark current

T. P. Pearsall, Michał Piskorski, A. Brochet et al. · IEEE Journal of Quantum Electronics · 1981 · 47 citations

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Vidicon-camera parallel-detection system for angle-resolved electron spectroscopy

S. P. Weeks, J. E. Rowe, S. B. Christman et al. · Review of Scientific Instruments · 1979 · 44 citations

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Tin doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular-beam epitaxy

K. Y. Cheng, A. Y. Cho, W. R. Wagner · Journal of Applied Physics · 1981 · 41 citations

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