A Ga_0.47In_0.53As/InP heterophotodiode with reduced dark current

Abstract

We have used a Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</inf> In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</inf> As/InP heterostructure to produce a photodiode (area = <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3 \times 10^{-4}</tex> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) which shows a saturated dark current of 100 pA at 23°C and 1.7 nA at 50°C. At this dark current, these photodiodes have near-unity quantum efficiency at 1.6 μm and show good photoresponse over the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1.0-1.65 \mu</tex> m region of the optical spectrum.