In _0.53 Ga _0.47 As <i>p-i-n</i> photodiodes for long-wavelength fibre-optic systems

Abstract

We describe p-i-n photodiodes fabricated from In0.53Ga0.47As grown lattice-matched on InP substrates. These diodes exhibit low junction capacitance (C&lt;1 pF at 20 V reverse bias), low dark current (≈10 nA), high break-down voltage (110 V) and wide photoresponse extending beyond 1.7 μm.