Physical limits and lifetime limitations of semiconductor devices at high temperatures

Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films

John W. Palmour, Hoyoul Kong, R. F. Davis · Journal of Applied Physics · 1988 · 113 citations

Engineering, Electrical Engineering, Materials Science +15

Advanced IGBT modules for railway traction applications: Reliability testing

H. Berg, E. Wolfgang · Microelectronics Reliability · 1998 · 63 citations

Engineering, Electrical Engineering, Electronic Materials +13

Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications

A. Hamidi, G. Coquery, R. Lallemand et al. · Microelectronics Reliability · 1998 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

High voltage BiCDMOS technology on bonded 2 μm SOI integrating vertical npn pnp, 60 V-LDMOS and MPU, capable of 200°C operation

H. Funaki, Y. Yamaguchi, Yoshimasa Kawaguchi et al. · 2002 · 12 citations

Engineering, Electrical Engineering, Microelectronics +16