High-voltage lateral RESURF MOSFETs on 4H-SiC

Abstract

High-voltage lateral RESURF MOSFETs have been fabricated on 4H-SiC with both nitrogen and phosphorus as source/drain and RESURF region implants. Blocking voltages as high as 1200 V and specific on-resistances of 4 /spl Omega/ cm/sup 2/ have been obtained, with the high on-resistance attributed to poor inversion layer mobility. Phosphorus is most appropriate for the source/drain implants due to low sheet resistance and contact resistance with low temperature anneals. However, poor activation of low dose phosphorus implants at 1200/spl deg/C makes nitrogen the preferred choice for the RESURF region.