Theoretical origins of <i>N</i>ss peaks observed in Gray-Brown MOS studies

Abstract

A MOS device has been modelled on a computer by using interface state parameters previously measured by a parallel conductance technique. A Gray-Brown measurement was simulated, and the resulting apparent interface state distribution was found to show a large peak near the band edge, although the known distribution was in fact monotonic. This spurious peak is associated with a rapid decrease in interface state capture cross section as the band edge is approached, and is seen when the measurement frequency is insufficiently high.