Electronics Letters · 2007 · 63 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor DetectorsSemiconductor PhysicsNear-threshold VoltageNoise Equivalent PowerSub-threshold OperationTerahertz DetectionTerahertz DetectorsTerahertz Semiconductor DevicesTerahertz WavesThreshold Voltage
Results of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage.
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