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Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid
1K
Citations
7
References
1996
Year
Terahertz TechnologyEngineeringTerahertz PhotonicsResonance ResponseOptical PropertiesComputational ElectromagneticsElectromagnetic RadiationElectrical EngineeringTerahertz SpectroscopyPhysicsHigh-frequency DeviceTerahertz ScienceSynchrotron RadiationMicroelectronicsLong Channel HemtTerahertz DevicesNatural SciencesSpectroscopyTwo-dimensional Electronic FluidApplied PhysicsTerahertz TechniqueTerahertz RadiationOptoelectronicsFrequency Multiplication
Plasma waves in two‑dimensional electron devices propagate faster than electrons, enabling operation at higher frequencies than conventional transit‑time limited devices. The authors aim to exploit the resonance response for developing novel detectors, mixers, and multipliers. Short‑channel HEMTs exhibit a resonant response at plasma frequencies with responsivities far exceeding those of Schottky diodes, while long‑channel HEMTs provide a broadband, non‑resonant response up to several tens of terahertz.
We show that a short channel High Electron Mobility Transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. This response can be used for new types of detectors, mixers, and multipliers. These devices should operate at much higher frequencies than conventional, transit-time limited devices, since the plasma waves propagate much faster than electrons. The responsivities of such devices may greatly exceed the responsivities of Schottky diodes currently used as detectors and mixers in the terahertz range. A long channel HEMT has a nonresonant response to electromagnetic radiation and can be used as a broadband detector for frequencies up to several tens of terahertz.
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