William Stillman

Low-frequency electronic noise in the double-gate single-layer graphene transistors

Guangchen Liu, William Stillman, Sergey Rumyantsev et al. · Applied Physics Letters · 2009 · 150 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

Sergey Rumyantsev, G Liu, William Stillman et al. · Journal of Physics Condensed Matter · 2010 · 144 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low-noise top-gate graphene transistors

G. Liu, William Stillman, Sergey Rumyantsev et al. · arXiv (Cornell University) · 2009 · 103 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs

William Stillman, M. S. Shur, Dmitry Veksler et al. · Electronics Letters · 2007 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced Plasma Wave Detection of Terahertz Radiation Using Multiple High Electron-Mobility Transistors Connected in Series

Tamer A. Elkhatib, V. Yu. Kachorovskii, William Stillman et al. · IEEE Transactions on Microwave Theory and Techniques · 2010 · 50 citations

Engineering, Electrical Engineering, Physics +17