Low-frequency electronic noise in the double-gate single-layer graphene transistors

Abstract

The authors report the results of an experimental investigation of the low-frequency noise in the double-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by ∼20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter αH≈2×10−3. The analysis of noise spectral density dependence on the top and bottom gate biases helped to elucidate the noise sources in these devices. The obtained results are important for graphene electronic and sensor applications.