Japanese Journal of Applied Physics · 1988 · 157 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceMaterials CharacterizationSemiconductor MaterialsThin FilmsStrain AnalysisStrain EngineeringStress-strain BehaviorThin Film StrainWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapBand Gap EnergyBiaxial StrainCompressive StrainFilm StrainHeteroepitaxial GrowthPhotoluminescenceStrain Effects
GaN films grown on (11 2̄0) and (0001) sapphire substrates are characterized by X-ray Bond's method and the low temperature photoluminescence measurement. The GaN films are found to be strained by the biaxial compressive stress. From the measured strain and the shift of PL peak energy, the deformation potential of GaN (the relation between the strain parallel to the c -axis and the band gap energy) is found to be 12 eV. The origin of this compressive stress is discussed.
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Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations