Concepedia

Electrical characteristics dependence on aluminum mole fraction in (Al0.5Ga0.5)Sb/InAs/(AlxGa1−x)Sb heterostructure

Kanji Yoh, Toshiaki Moriuchi, Mitsuaki Yano, Masataka Inoue

Journal of Crystal Growth · 1991 · 21 citations · 6 references

DOI

Concepts

References

6

InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition

G.A. Sai-Halasz, L. Esaki, Walter A. Harrison · Physical review. B, Condensed matter · 1978 · 283 citations

, , +17

Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

G. Tuttle, H. Kroemer, John H. English · Journal of Applied Physics · 1990 · 282 citations

, , +17

Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells

G. Tuttle, H. Kroemer, John H. English · Journal of Applied Physics · 1989 · 205 citations · Full text

, , +17

Self-consistent calculations in InAs–GaSb heterojunctions

G. Bastard, E. E. Méndez, L. L. Chang et al. · Journal of Vacuum Science and Technology · 1982 · 45 citations

, , +17

Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy

M. Yano, M. Ashida, Y. Iwai et al. · Applied Surface Science · 1990 · 12 citations

, , +16