IEEE Journal of Solid-State Circuits · 1981 · 12 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDynamic Power ReductionIntegrated Circuit DesignLow-power Digital Circuit DesignPower ManagementHigh-speed Circuit DesignHigh-speed Cmos DesignLow-power Cmos DesignLow-power Memory CircuitsMemory Circuit DesignPolysiliconStatic Cmos CircuitsStatic Random-access Memory Design
Using advanced high-performance CMOS (Hi-CMOSII) technology and a high-speed circuit technique, a fully static 4096-word by one-bit RAM with typical address access time of 18 ns and power dissipation of 150 mW has been designed. The power-access-time product realized by the design is almost an order of magnitude better than existing NMOS 4K static RAMs. Moreover, to produce low-cost high-density static RAMs, a new redundancy technique utilizing laser shorting of intrinsic polysilicon is proposed.
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A high-speed, low-power Hi-CMOS 4K static RAM
T. Masuhara, O. Minato, Takeshi Sasaki et al. · 1978 · 33 citations
Engineering, Computer Engineering, Electrical Engineering +14
R. Jecmen, Alexander Ebel, Richard J. Smith et al. · 1979 · 20 citations
Engineering, Computer Engineering, Electrical Engineering +16
A high-speed low-power Hi-CMOS 4K static RAM
O. Minato, T. Masuhara, Takeshi Sasaki et al. · IEEE Transactions on Electron Devices · 1979 · 16 citations
Engineering, Computer Engineering, Electrical Engineering +17