A high performance 4K static RAM fabricated with an advanced MOS technology

Abstract

RECENT TECHNOLOGICAL advances have allowed N-channel MOS designs to achieve bipolar performance at “IS power levels’ 72. Using advanced MOS technology, a 5-V, 4096-bit static RAM has been designed with a typical access time and power dissipation of 45ns and 500mW, respectively. The memory is fully static and offers a 40mW powerdown mode.