IEEE Transactions on Electron Devices · 1979 · 16 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDynamic Power ReductionLow-power Digital Circuit DesignMemory DevicesMemory Subsystem DesignLow-power Circuit DesignLow-power Cmos DesignLow-power Memory CircuitsRandom Access Memory (Ram)Random-access MemoryStatic Cmos CircuitsStatic Random-access MemoryStatic Random-access Memory Design
A high-speed low-power CMOS fully static, 4096 word by 1 bit random-access memory (RAM) has been developed, which contains a bipolar-CMOS (BCMOS) circuit on the same chip. The device is realized using low-power-oriented circuit design and high-performance CMOS technology utilizing 3-µm gate length. The fabricated 4K static RAM has an address access time of 43 ns and a power dissipation of 80 mW.
3
A high-speed, low-power Hi-CMOS 4K static RAM
T. Masuhara, O. Minato, Takeshi Sasaki et al. · 1978 · 33 citations
Engineering, Computer Engineering, Electrical Engineering +14