physica status solidi (a) · 2002 · 19 citations · 12 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOpticsSemiconductor MaterialsAnisotropic MaterialsNonlinear Optical MaterialsOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor PhysicsStrain EngineeringAnisotropic StrainEffective Hamiltonian TheoryExciton StatesExciton TheoryExcitonsGallium NitrideGallium Nitride (Gan) MaterialsNonlinear Optical Response
The influence of the anisotropic in-plane strain on the optical response of GaN layers grown on a-plane sapphire is investigated. A splitting of the Γ5 states of the A and B free excitons into two components, polarized parallel and perpendicular to the strain direction, is observed. The experimental results are discussed in the framework of the effective exciton Hamiltonian formalism.
12
Biaxial strain dependence of exciton resonance energies in wurtzite GaN
A. Shikanai, T. Azuhata, Takayuki Sota et al. · Journal of Applied Physics · 1997 · 250 citations
Brillouin scattering study of gallium nitride: elastic stiffness constants
Masashi Yamaguchi, T. Yagi, T. Azuhata et al. · Journal of Physics Condensed Matter · 1997 · 122 citations
Andenet Alemu, Bernard Gil, M. Julier et al. · Physical review. B, Condensed matter · 1998 · 93 citations