InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

TLDR

InGaN multi‑quantum‑well laser diodes were grown by metal‑organic chemical vapor deposition on sapphire (11̄20) substrates and cleaved along the (1̄110) orientation to form the laser cavity mirror facets. The resulting InGaN MQW laser diodes emitted a 415.6‑nm peak with a 0.05‑nm full width at half maximum under 1.17‑A pulsed injection at room temperature, achieving a threshold current density of 9.6 kA cm⁻².

Abstract

InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III–V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrate with (11*BAR*2*BAR*0) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (1*BAR*1*BAR*02) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had a full width at half-maximum of 0.05 nm under pulsed current injection of 1.17 A at room temperature. The laser threshold current density was 9.6 kA/cm 2 .