Japanese Journal of Applied Physics · 1996 · 342 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsLaser DiodesQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersCurrent DensityCurrent InjectionFull Width At Half MaximumGallium Nitride (Gan) MaterialsMetalorganic Chemical Vapor DepositionQuantum Well Laser DiodesQuantum Well StructuresSemiconductor Laser Diodes
InGaN multi‑quantum‑well laser diodes were grown by metal‑organic chemical vapor deposition on sapphire (11̄20) substrates and cleaved along the (1̄110) orientation to form the laser cavity mirror facets. The resulting InGaN MQW laser diodes emitted a 415.6‑nm peak with a 0.05‑nm full width at half maximum under 1.17‑A pulsed injection at room temperature, achieving a threshold current density of 9.6 kA cm⁻².
InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III–V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrate with (11*BAR*2*BAR*0) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (1*BAR*1*BAR*02) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had a full width at half-maximum of 0.05 nm under pulsed current injection of 1.17 A at room temperature. The laser threshold current density was 9.6 kA/cm 2 .
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Hole Compensation Mechanism of P-Type GaN Films
Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations