Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Engineering, Materials Engineering, Materials Science +17

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Sachin Jain, M. Willander, H.E. Maes · Semiconductor Science and Technology · 1996 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

Shota Kitamura, Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki · Japanese Journal of Applied Physics · 1995 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

Masafumi Yamaguchi, Masami Tachikawa, Mitsuru Sugo et al. · Applied Physics Letters · 1990 · 81 citations

Engineering, Materials Engineering, Materials Science +17

Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition

X. Li, J. J. Coleman · Applied Physics Letters · 1996 · 55 citations

Natural Sciences, Materials Engineering, Materials Science +15