Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs

Abstract

This paper presents results of statistical analysis of RTN in highly scaled HKMG FETs. A robust algorithm to extract multiple-trap RTN is proposed and applied to show that RTN can cause serious variation even when HKMG and undoped channel are introduced. We further focus on hysteretic behavior caused by RTN with time constants much longer than the circuit timescale. This reveals that RTN also induces novel instabilities such as short-term BTI and logic delay uncertainty. Extraction of RTN in SRAM arrays is also presented to discuss its impact on operational stability.