Japanese Journal of Applied Physics · 1984 · 10 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsHeterostructure DevicesHeterostructuresMetalorganic Chemical Vapor DepositionSpacer TechnologyTransport In HeterostructuresTwo-dimensional Electron GasesTwo-dimensional Electron SystemsTwo-dimensional Semiconductor Heterostructures
Selectively-doped GaAs/n-Al 0.3 Ga 0.7 As heterostructures were grown by reduced-pressure metalorganic chemical vapor deposition. It is shown that the growth conditions in an undoped Al 0.3 Ga 0.7 As spacer layer have a remarkable effect on the two-dimensional electron gas (2DEG) mobility. A 2DEG mobility of 150000 cm 2 /V·s is obtained for a sheet electron concentration ( N s ) of 6.9×10 11 cm -2 at 4.2 K. The 2DEG mobility increases with incrasing N s as a result of exposure to light and reaches a maximum value of 180000 cm 2 /V·s at N s =7.8×10 11 cm -2 .
22
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
Two-dimensional electron gas at a semiconductor-semiconductor interface
H. L. Störmer, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1979 · 448 citations