K. Tsubaki

High-temperature electron transport properties in AlGaN/GaN heterostructures

Narihiko Maeda, K. Tsubaki, Tadashi Saitoh et al. · Applied Physics Letters · 2001 · 135 citations

Semiconductors, Room Temperature, Electrical Engineering +13

Superior Pinch-Off Characteristics at 400^°C in AlGaN/GaN Heterostructure Field Effect Transistors

Narihiko Maeda, Tadashi Saitoh, K. Tsubaki et al. · Japanese Journal of Applied Physics · 1999 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Spin splitting in modulation-doped AlGaN/GaN two-dimensional electron gas

K. Tsubaki, Noritoshi Maeda, Tadashi Saitoh et al. · Applied Physics Letters · 2002 · 57 citations

Wide-bandgap Semiconductor, Spintronics, Electrical Engineering +13

Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

Narihiko Maeda, Tadashi Saitoh, K. Tsubaki et al. · Applied Physics Letters · 2000 · 55 citations

Wide-bandgap Semiconductor, Electrical Engineering, Enhanced Effect +10

Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

C. X. Wang, K. Tsubaki, Nobuhiko P. Kobayashi et al. · Applied Physics Letters · 2004 · 54 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +12