Noritoshi Maeda - Concepedia

Author

Noritoshi Maeda

RIKEN

Also Known As

N Maeda, N. MAEDA, N. Maeda, Nagi Maeda, Narumi Maeda, Natsuki Maeda, Noritoshi MAEDA, Noritoshi Maeda

149

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

RIKEN Fujitsu (Japan)Nippon Soken (Japan)Yamaguchi University The University of Tokyo

About

Noritoshi Maeda is an author at RIKEN specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	37	1.9K
2	Applied Physics	23	33	1.8K
3	Health Sciences	1	1	108
4	Chemical Engineering	1	1	74
5	Computer Engineering	1	1	33

Noritoshi Maeda

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes Hideki Hirayama, Noritoshi Maeda, Sachie Fujikawa, Japanese Journal of Applied Physics Optical MaterialsFuture ProspectsEngineeringOptoelectronic DevicesSemiconductors	2014	541
High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer Yukio Kashima, Noritoshi Maeda, Eriko Matsuura, Applied Physics Express White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	2017	145
13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications M. Ajmal Khan, Noritoshi Maeda, Masafumi Jo, Journal of Materials Chemistry C Ultraviolet LightOptical MaterialsEngineeringLuminescence PropertyOptical Properties	2018	108
Realization of high‐efficiency deep‐UV LEDs using transparent p‐AlGaN contact layer Noritoshi Maeda, Hideki Hirayama Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceElectrical EngineeringOptical MaterialsElectronic DevicesEngineering	2013	94
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance M. Ajmal Khan, Noritoshi Maeda, Joosun Yun, Scientific Reports	2022	86
Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer Masafumi Jo, Noritoshi Maeda, Hideki Hirayama Applied Physics Express White OledElectrical EngineeringEnhanced Light ExtractionEngineeringSolid-state Lighting	2015	81
External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs M. Ajmal Khan, Yuri Itokazu, Noritoshi Maeda, ACS Applied Electronic Materials Ultraviolet LightElectrical EngineeringOptical MaterialsChemical EngineeringAlgan-based Uvb Leds	2020	74
Spin splitting in modulation-doped AlGaN/GaN two-dimensional electron gas K. Tsubaki, Noritoshi Maeda, Tadashi Saitoh, Applied Physics Letters Wide-bandgap SemiconductorSpintronicsElectrical EngineeringMagnetoresistance OscillationAlgan/gan Heterostructure Devices	2002	57
Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes Noritoshi Maeda, Masafumi Jo, Hideki Hirayama physica status solidi (a) SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesOptical Materials	2018	55
Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy C. X. Wang, K. Tsubaki, Nobuhiko P. Kobayashi, Applied Physics Letters Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	2004	54

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