Concepedia

New emission lines in highly carbon ion-implanted GaAs

Yunosuke Makita, Masaki YOKOTA, Toshio Nomura, H. Tanoue, Ichiro Takayasu, Shigeo Kataoka, Tomio Izumi, T. Matsumori

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 22 citations · 5 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIon ImplantationWide Band Gap SemiconductorsEmission Line StudiesFine-structure Line EmissionIon Implantation EffectsLine Emission Spectra

References

5

Gallium Arsenide and Related Compounds

Bob Wilson · Physics Bulletin · 1973 · 694 citations

Natural Sciences, Chemistry, Physics +10

Luminescence and Excitation Spectra of Exciton Emission in GaAs

U. Heim, P. Hiesinger · physica status solidi (b) · 1974 · 174 citations

Natural Sciences, Materials Science, Optoelectronics +16

Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs

F. Briones, D. M. Collins · Journal of Electronic Materials · 1982 · 115 citations

Engineering, Materials Engineering, Materials Science +14

An optical characterization of defect levels induced by MBE growth of GaAs

J. P. Contour, G. Neu, M. Leroux et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence of carbon-implanted GaAs

G. B. Stringfellow, W. Koschel, F. Briones et al. · Applied Physics Letters · 1981 · 48 citations

Engineering, Materials Engineering, Materials Science +16