Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR

Keisuke Sato, Tomio Izumi, Mitsuo Iwase, +4

Applied Surface Science

Materials ScienceEngineeringNanomaterialsNanotechnologyApplied Physics +5

Photoluminescence of very dilutely C+ ion-implanted GaAs

Yunosuke Makita, Toshio Nomura, Masaki YOKOTA, +4

Applied Physics Letters

Electrical EngineeringC+ Ion-implanted GaasExciton Emission RegionEngineeringIon Implantation +9

Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition

Yusuke Mori, Yoshiyuki Show, Masahiro Deguchi, +12

Japanese Journal of Applied Physics

Materials ScienceSurface RegionDiamond-like CarbonEngineeringPhysics +10

Influence of defects on electron emission from diamond films

Yoshiyuki Show, F. Matsuoka, Masaharu Hayashi, +3

Journal of Applied Physics

Materials ScienceSpintronicsDiamond FilmDiamond-like CarbonEngineering +10

Photoluminescence spectra of undoped GaAs grown by molecular-beam epitaxy at very high and low substrate temperatures

Kazuhiro Kudo, Yunosuke Makita, Ichiro Takayasu, +4

Journal of Applied Physics

Optical MaterialsEngineeringResidual ImpuritiesSemiconductorsIi-vi Semiconductor +16

Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method

Takashi Hirao, Kentaro Setsune, Masatoshi Kitagawa, +4

Japanese Journal of Applied Physics

EngineeringChemistrySilicon On InsulatorPlasma ProcessingBond Configurations +14

Effects of Anodization Temperature on Photoluminescence from Porous Silicon

Hiroshi Ono, H. Gomyou, Hiroshi Morisaki, +5

Journal of The Electrochemical Society

Materials ScienceLuminescence IntensityPhotoluminescenceEngineeringCrystalline Defects +11

Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method

Takashi Hirao, Kentaro Setsune, Masatoshi Kitagawa, +3

Japanese Journal of Applied Physics

Optical MaterialsEngineeringElectron Cyclotron ResonanceDeposition ConditionsThin Film Process Technology +17

New emission lines in highly carbon ion-implanted GaAs

Yunosuke Makita, Masaki YOKOTA, Toshio Nomura, +5

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Ion ImplantationElectrical EngineeringNew Emission LinesEngineeringApplied Physics +1

Structural characterization of CVD diamond films using the ESR method

Yoshiyuki Show, Mitsuo Iwase, Tomio Izumi

Thin Solid Films

Materials ScienceMaterials EngineeringDiamond-like CarbonEngineeringMaterials Characterization +2