Photoluminescence of very dilutely C+ ion-implanted GaAs

Abstract

Very dilute C+ (carbon) ion implantations were carried out for extremely pure GaAs wafers grown by molecular beam epitaxy (MBE). Low-temperature photoluminescence measurements revealed that at least five sharp new emission lines are commonly formed near bound exciton emission region by the introduction of C for the dose range between 1015 and 1017 cm−3. It was for the first time demonstrated that the most dominant line among the above emission is identical to the g line in defect-induced bound exciton emission series which are frequently observed in rather impure MBE-grown or metalorganic chemical vapor deposition (MOCVD)-grown GaAs samples.