T. Matsumori

Photoluminescence of very dilutely C+ ion-implanted GaAs

Yunosuke Makita, Toshio Nomura, Masaki YOKOTA et al. · Applied Physics Letters · 1985 · 51 citations

Engineering, Electrical Engineering, Materials Engineering +14

Photoluminescence spectra of undoped GaAs grown by molecular-beam epitaxy at very high and low substrate temperatures

Kazuhiro Kudo, Yunosuke Makita, Ichiro Takayasu et al. · Journal of Applied Physics · 1986 · 33 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs

Shigeru Shigetomi, Yunosuke Makita, A.C. Beye et al. · Journal of Applied Physics · 1991 · 23 citations

Engineering, Materials Engineering, Materials Science +15

New emission lines in highly carbon ion-implanted GaAs

Yunosuke Makita, Masaki YOKOTA, Toshio Nomura et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 22 citations

Engineering, Electrical Engineering, Materials Science +10

As4 to Ga flux ratio dependence of the optical and electrical properties of Ge-doped GaAs grown by molecular-beam epitaxy

Yunosuke Makita, Hideki Tanaka, M. Mori et al. · Journal of Applied Physics · 1989 · 18 citations

Engineering, Materials Engineering, Materials Science +17