Shigeru Shigetomi - Concepedia

Author

Shigeru Shigetomi

Kurume University

Also Known As

Shigeru Shigetomi

Publications

276

Citations

H-Index

Concepts

All Affiliations

Kurume University University of Miyazaki

About

Shigeru Shigetomi is an author at Kurume University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	209
2	Applied Physics	10	10	209
3	Electrical Engineering	7	7	112
4	Natural Sciences	2	2	58
5	Chemistry	1	1	42

Shigeru Shigetomi

Publications

209

Citations

H-Index

Page 1

	Year	Citations
Near Band Edge Photoacoustic Spectra of p-Si Single Crystals Tetsuo Ikari, Hirosumi Yokoyama, Shigeru Shigetomi, Japanese Journal of Applied Physics Optical MaterialsEngineeringAbsorption SpectroscopyChemistrySpectroscopic Property	1990	42
Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals Shigeru Shigetomi, Tetsuo Ikari, Yutaka Koga, Japanese Journal of Applied Physics EngineeringPhoto-hall EffectOptoelectronic DevicesSemiconductorsIi-vi Semiconductor	1981	39
A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor-associated emission in GaAs Nobukazu Ohnishi, Yunosuke Makita, M. Mori, Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringIon ImplantationTheoretical ExplanationEngineering	1987	27
Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs Shigeru Shigetomi, Yunosuke Makita, A.C. Beye, Journal of Applied Physics EngineeringElectrical PropertiesSemiconductor NanostructuresSemiconductorsIon Implantation	1991	23
As4 to Ga flux ratio dependence of the optical and electrical properties of Ge-doped GaAs grown by molecular-beam epitaxy Yunosuke Makita, Hideki Tanaka, M. Mori, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesAmphoteric Impurity	1989	18
Optical and Electrical Properties of p-GaSe Doped with Sb Shigeru Shigetomi, Tetsuo Ikari, Hideki Nishimura Japanese Journal of Applied Physics Optical MaterialsEngineeringLuminescence PropertyIi-vi SemiconductorOptical Properties	1993	16
Annealing Behavior of Deep Trap Level in p-GaTe Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima Japanese Journal of Applied Physics Electrical EngineeringSemiconductor DeviceDeep LevelsEngineeringPhysics	1998	13
Electrical Properties of p- and n-GaSe Doped with As and Ge Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima Japanese Journal of Applied Physics Materials ScienceElectrical EngineeringEngineeringPhysicsHall Effect Measurements	2000	11
Optical and Electrical Properties of p-GaAe Doped with Sb Shigeru Shigetomi, Tetsuo Ikari, Hideki Nishimura Japanese Journal of Applied Physics P-gaae DopedSample NameElectrical EngineeringOptical MaterialsEngineering	1993	10
Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn Shigeru Shigetomi, Tetsuo Ikari Japanese Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringOptical MaterialsEngineeringPhotoluminescence	2002	10

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