Nobukazu Ohnishi

Photoluminescence of Mg-doped GaAs grown by molecular beam epitaxy using Mg3As2 as a Mg source: A comparison with Mg+ ion implantation

Yunosuke Makita, Yoshinori Takeuchi, Nobukazu Ohnishi et al. · Applied Physics Letters · 1986 · 31 citations

Materials Science, Electrical Engineering, Photoluminescence +13

Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

Yoshinori Takeuchi, Yunosuke Makita, Kazuhiro Kudo et al. · Applied Physics Letters · 1986 · 31 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Electrical Engineering +15

A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor-associated emission in GaAs

Nobukazu Ohnishi, Yunosuke Makita, M. Mori et al. · Journal of Applied Physics · 1987 · 27 citations

Ii-vi Semiconductor, Electrical Engineering, Ion Implantation +13

Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs

Toshio Nomura, Yunosuke Makita, Katsuhiro Irie et al. · Applied Physics Letters · 1986 · 25 citations

Ii-vi Semiconductor, Photonics, Electrical Engineering +15

Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs

Shigeru Shigetomi, Yunosuke Makita, A.C. Beye et al. · Journal of Applied Physics · 1991 · 23 citations

Engineering, Electrical Properties, Semiconductor Nanostructures +16