Photoluminescence of Mg-doped GaAs grown by molecular beam epitaxy using Mg3As2 as a Mg source: A comparison with Mg+ ion implantation

Yunosuke Makita, Yoshinori Takeuchi, Nobukazu Ohnishi, +6

Applied Physics Letters

Materials ScienceElectrical EngineeringPhotoluminescenceEngineeringCrystalline Defects +11

Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

Yoshinori Takeuchi, Yunosuke Makita, Kazuhiro Kudo, +4

Applied Physics Letters

Wide-bandgap SemiconductorIi-vi SemiconductorElectrical EngineeringIon ImplantationEngineering +13

A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor-associated emission in GaAs

Nobukazu Ohnishi, Yunosuke Makita, M. Mori, +3

Journal of Applied Physics

Ii-vi SemiconductorElectrical EngineeringIon ImplantationTheoretical ExplanationEngineering +11

Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs

Toshio Nomura, Yunosuke Makita, Katsuhiro Irie, +4

Applied Physics Letters

Ii-vi SemiconductorPhotonicsElectrical EngineeringSe AtomsEngineering +13

Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs

Shigeru Shigetomi, Yunosuke Makita, A.C. Beye, +3

Journal of Applied Physics

EngineeringElectrical PropertiesSemiconductor NanostructuresSemiconductorsIon Implantation +14

As4 to Ga flux ratio dependence of the optical and electrical properties of Ge-doped GaAs grown by molecular-beam epitaxy

Yunosuke Makita, Hideki Tanaka, M. Mori, +5

Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesAmphoteric Impurity +18

Theory of double refraction and kerr effect in BaTiO3

Wataru Kinase, Nobukazu Ohnishi, Masanori Yoshikawa, +1

Ferroelectrics

Optical MaterialsEngineeringChemistrySpectroscopic PropertyMultiferroics +15

Selective self-optical compensation effect for a newly discovered acceptor-associated emission in Zn+ ion-implanted GaAs

Nobukazu Ohnishi, Yunosuke Makita, Katsuhiro Irie, +5

Journal of Applied Physics

Optical MaterialsEngineeringPhotoluminescence MeasurementsChemistryLuminescence Property +16

Quantum theory of electrooptic effect in BaTiO3

Wataru Kinase, Masanori Yoshikawa, Nobukazu Ohnishi

Ferroelectrics

Quantum ScienceElectrical EngineeringElectrooptic EffectEngineeringPhysics +12

Selective optical compensation effect of two new near-band-edge emissions in simultaneously acceptor (Zn+) and donor (Se+) ion-implanted GaAs

Yunosuke Makita, Toshio Nomura, Kazuhiro Kudo, +6

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +17