Katsuhiro Irie

Photoluminescence intermittency in an individual single-walled carbon nanotube at room temperature

Kazunari Matsuda, Yoshihiko Kanemitsu, Katsuhiro Irie et al. · Applied Physics Letters · 2005 · 57 citations

Room Temperature, Single Pl Peak, Photoluminescence +15

Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

Yoshinori Takeuchi, Yunosuke Makita, Kazuhiro Kudo et al. · Applied Physics Letters · 1986 · 31 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Electrical Engineering +15

A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor-associated emission in GaAs

Nobukazu Ohnishi, Yunosuke Makita, M. Mori et al. · Journal of Applied Physics · 1987 · 27 citations

Ii-vi Semiconductor, Electrical Engineering, Ion Implantation +13

Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs

Toshio Nomura, Yunosuke Makita, Katsuhiro Irie et al. · Applied Physics Letters · 1986 · 25 citations

Ii-vi Semiconductor, Photonics, Electrical Engineering +15

Excitation of Trapped Electrons in SbSI

Katsuhiro Irie · Journal of the Physical Society of Japan · 1973 · 17 citations

Electrical Engineering, Engineering, Physics +15