Katsuhiro Irie - Concepedia

Author

Katsuhiro Irie

Waseda University

Also Known As

K. Irie, Katsuhiro Irie

Publications

255

Citations

H-Index

Concepts

All Affiliations

Waseda University

About

Katsuhiro Irie is an author at Waseda University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	207
2	Applied Physics	9	9	207
3	Electrical Engineering	8	8	150
4	Chemistry	2	2	72
5	Natural Sciences	1	1	15

Katsuhiro Irie

Publications

207

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence intermittency in an individual single-walled carbon nanotube at room temperature Kazunari Matsuda, Yoshihiko Kanemitsu, Katsuhiro Irie, Applied Physics Letters Room TemperatureSingle Pl PeakPhotoluminescenceEngineeringPl Intermittency	2005	57
Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities Yoshinori Takeuchi, Yunosuke Makita, Kazuhiro Kudo, Applied Physics Letters Wide-bandgap SemiconductorIi-vi SemiconductorElectrical EngineeringIon ImplantationEngineering	1986	31
A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor-associated emission in GaAs Nobukazu Ohnishi, Yunosuke Makita, M. Mori, Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringIon ImplantationTheoretical ExplanationEngineering	1987	27
Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs Toshio Nomura, Yunosuke Makita, Katsuhiro Irie, Applied Physics Letters Ii-vi SemiconductorPhotonicsElectrical EngineeringSe AtomsEngineering	1986	25
Excitation of Trapped Electrons in SbSI Katsuhiro Irie Journal of the Physical Society of Japan Electrical EngineeringEngineeringPhysicsApplied PhysicsQuantum Materials	1973	17
Selective self-optical compensation effect for a newly discovered acceptor-associated emission in Zn+ ion-implanted GaAs Nobukazu Ohnishi, Yunosuke Makita, Katsuhiro Irie, Journal of Applied Physics Optical MaterialsEngineeringPhotoluminescence MeasurementsChemistryLuminescence Property	1986	15
Selective optical compensation effect of two new near-band-edge emissions in simultaneously acceptor (Zn+) and donor (Se+) ion-implanted GaAs Yunosuke Makita, Toshio Nomura, Kazuhiro Kudo, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1986	13
Formation of a new deep emission in Si+, S+, Se+, and Te+ ion-implanted GaAs Yunosuke Makita, Yoshinori Takeuchi, Toshio Nomura, Applied Physics Letters SemiconductorsElectrical EngineeringIon ImplantationEngineeringPhotoluminescence	1986	12
Dielectric properties of SbSI Katsuhiro Irie Ferroelectrics DielectricsEngineeringLst RelationElectromagnetic CompatibilityMagnetism	1978	10

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