Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs

Abstract

The selective optical compensation effect in which exclusively acceptor-associated emissions g and [g-g] are selectively quenched by the simultaneous presence of acceptor and donor atoms, was investigated in dually Zn+ (acceptor)-implanted and Se+(donor)-implanted GaAs as a function of Se to Zn concentration ratio, [Se]/[Zn], at a fixed Zn concentration of 1×1017 cm−3. It was revealed for the first time that Se atoms with one-tenth of the concentration of Zn have the ability to significantly suppress the [g-g] emission. However, the g emission is not significantly suppressed by the presence of even an equal concentration of Se atoms.