Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

Abstract

Photoluminescence studies of C+, Mg+, Zn+, and Cd+ ion-implanted GaAs layers were carried out at 2 K. Two conspicuous emissions denoted by g and [g-g] were observed to be situated between bound exciton and band to acceptor emissions. It was found that these two are common emissions among the above acceptor impurities, and that they can be explicitly observed only when the background impurity concentration is extremely small.