Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs

Experimental Proof of the Existence of a New Electronic Complex in Silicon

J. R. Haynes · Physical Review Letters · 1960 · 608 citations

Natural Sciences, Physics, Condensed Matter Physics +7

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

Engineering, Electrical Engineering, Materials Science +12

The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs

H. Künzel, K. Ploog · Applied Physics Letters · 1980 · 225 citations

Engineering, Materials Engineering, Materials Science +16

Electrical characterization of epitaxial layers

G. E. Stillman, C. M. Wolfe · Thin Solid Films · 1976 · 206 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Hall coefficient factor for polar mode scattering in n-type GaAs

G. E. Stillman, C. M. Wolfe, J. O. Dimmock · Journal of Physics and Chemistry of Solids · 1970 · 180 citations

Natural Sciences, Materials Science, Physics +13