MBE HgCdTe on Alternative Substrates for FPA Applications

Energy gap versus alloy composition and temperature in Hg1−<i>x</i>Cd<i>x</i>Te

Gary L. Hansen, J. L. Schmit, T. N. Casselman · Journal of Applied Physics · 1982 · 638 citations

Materials Science, Energy Band Gap, Microwave Spectroscopy +12

Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy

W. J. Everson, Christopher Ard, J. L. Sepich et al. · Journal of Electronic Materials · 1995 · 149 citations

Materials Science, Cdznte Substrates, Chemistry +1

Effect of interface chemistry on the growth of ZnSe on the Si(100) surface

R. D. Bringans, D. K. Biegelsen, L.-E. Swartz et al. · Physical review. B, Condensed matter · 1992 · 60 citations

Engineering, Heteroepitaxial Growth, Silicon On Insulator +17

Modeling of arsenic activation in HgCdTe

M. A. Berding, A. Sher, Mark van Schilfgaarde et al. · Journal of Electronic Materials · 1998 · 52 citations

Metalloid Contamination, Arsenic Activation, Hydrogen +2

Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templates

Nibir K. Dhar, C. E. C. Wood, A.L. Gray et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 49 citations

Engineering, Crystal Growth Technology, Silicon On Insulator +18