M. A. Berding - Concepedia

Author

M. A. Berding

Also Known As

M A Berding, M Berding, M. A. BERDING, M. A. Berding, M. Berding, M.A. BERDING, M.A. Berding, Martha A. Berding, Witold Palsoz

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

SRI International Menlo School Auburn University Rockwell Automation (United States)Stanford University

About

M. A. Berding is an author at SRI International specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	40	1.3K
2	Applied Physics	22	37	1.2K
3	Natural Sciences	9	9	376
4	Health Sciences	1	1	25
5	Biochemistry	1	1	25

M. A. Berding

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Native defects in CdTe M. A. Berding Physical review. B, Condensed matter Materials ScienceIi-vi SemiconductorNative DefectsTellurium-saturated ConditionsEngineering	1999	180
Polarized x-ray absorption edge spectroscopy of single-crystal copper(II) complexes T. Smith, James E. Penner‐Hahn, M. A. Berding, Journal of the American Chemical Society Materials ScienceInorganic ChemistryX-ray CrystallographyX-ray SpectroscopySingle-crystal Copper	1985	155
Structural properties of bismuth-bearing semiconductor alloys M. A. Berding, A. Sher, A.-B. Chen, Journal of Applied Physics Materials ScienceSemiconductorsMaterials EngineeringBi CompoundsBismuth-bearing Iii-v Semiconductor	1988	68
Annealing conditions for intrinsic CdTe M. A. Berding Applied Physics Letters Materials ScienceSemiconductorsIi-vi SemiconductorTellurium-saturated ConditionsEngineering	1999	53
Modeling of arsenic activation in HgCdTe M. A. Berding, A. Sher, Mark van Schilfgaarde, Journal of Electronic Materials Metalloid ContaminationArsenic ActivationHydrogenChemistryElemental Characterization	1998	52
Minority carrier lifetimes in HgCdTe alloys Srini Krishnamurthy, M. A. Berding, Zhi Yu Journal of Electronic Materials Hgcdte AlloysApplied PhysicsAlloy DesignAlloy Phase	2006	49
Amphoteric behavior of arsenic in HgCdTe M. A. Berding, A. Sher Applied Physics Letters Mercury Partial PressureAmphoteric BehaviorArsenic DiffusionEngineeringCrystal Growth Technology	1999	47
Defects in ZnTe, CdTe, and HgTe: Total energy calculations M. A. Berding, Mark van Schilfgaarde, A. T. Paxton, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Total EnergyEngineeringSubstitution EnergyComputational ChemistryDefect Tolerance	1990	44
MBE growth and characterization of in situ arsenic doped HgCdTe A. C. Chen, M. Zandian, D. D. Edwall, Journal of Electronic Materials Ii-vi SemiconductorChemical EngineeringEngineeringCrystal Growth TechnologyMbe Growth	1998	40
Electronic quasichemical formalism: Application to arsenic deactivation in silicon M. A. Berding, A. Sher Physical review. B, Condensed matter Statistical Mechanical FormalismEngineeringPhysicsElectronic Quasichemical FormalismElectronic Disorder	1998	39

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