Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1997 · 470 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

S. R. Lee, A. M. West, Andrew A. Allerman et al. · Applied Physics Letters · 2005 · 291 citations

Natural Sciences, Materials Engineering, Materials Science +17

Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices

P. Kozodoy, Monica Hansen, Steven P. DenBaars et al. · Applied Physics Letters · 1999 · 275 citations

Engineering, Materials Science, Physics +17

<i>p</i>-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

Toshiyuki Tanaka, A. Watanabe, Hiroshi Amano et al. · Applied Physics Letters · 1994 · 259 citations

Engineering, Materials Engineering, Materials Science +17

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

Harumasa Yoshida, Yoji Yamashita, Masakazu Kuwabara et al. · Applied Physics Letters · 2008 · 239 citations

Engineering, Electrical Engineering, Materials Science +17