Journal of Applied Physics · 1994 · 10 citations · 23 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsMaterials CharacterizationSemiconductor MaterialsInterface ModelingSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsSurface CrystallographyBondingCoincidence Site LatticesEpitaxial InterfacesHeterostructuresInterface BondingSemiconductor CrystallographySurface Atomic StructureTransmission Electron Microscopy Of Interfaces
High-resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi2/(111)Si double-heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(111)Si interfaces can be systematically deduced from the dichromatic constrained-coincidence-site-lattice patterns. The atomic structures were determined by comparing HRTEM images with computer-simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.
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