Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 10 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsWide Band Gap SemiconductorsGallium ArsenideJunction Leakage CurrentLeakage Current ReductionReverse Bias CharacteristicsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky BarriersSemiconductor Heterojunctions
Interfacial As is shown to reduce reverse-bias current in Al–GaAs Schottky barriers. It is suggested that the leakage reduction is associated with the removal of low work function phases at the interface. In addition, current–voltage measurements performed on In0.75Ga0.25As–GaAs heterojunctions indicate a dependence upon the condition of the GaAs prior to deposition of the In0.75Ga0.25As layer.